Part Number
|
IXFK180N25T |
Manufacturer
|
IXYS |
Description
|
GigaMOS Power MOSFET |
Published
|
Jul 5, 2010 |
Detailed Description
|
Advance Technical Information
www.DataSheet4U.com
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fa...
|
Datasheet
|
IXFK180N25T
|
Overview
Advance Technical Information
www.
DataSheet4U.
com
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK180N25T IXFX180N25T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
250V 180A 12.
9mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 250 250 ± 20 ± 30 180 160 500 40 3 20 1390 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
N/lb...
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