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IXFK180N25T

Part Number	IXFK180N25T
Manufacturer	IXYS
Description	GigaMOS Power MOSFET
Published	Jul 5, 2010
Detailed Description	Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fa...
Datasheet	IXFK180N25T PDF File

Overview

Advance Technical Information www.
DataSheet4U.
com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK180N25T IXFX180N25T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 250V 180A 12.
9mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 180 160 500 40 3 20 1390 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
N/lb...

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