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Part Number
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IXFN520N075T2 |
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Manufacturer
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IXYS |
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Description
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TrenchT2 GigaMOS HiperFET Power MOSFET |
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Published
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Jul 5, 2010 |
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Detailed Description
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Preliminary Technical Information
com
TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET
N-Channel Enhanceme...
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|
Datasheet
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IXFN520N075T2
|
Overview
Preliminary Technical Information
com
TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN520N075T2
VDSS ID25
= =
RDS(on) ≤
75V 480A 1.
9mΩ
miniBLOC, SOT-227 E153432
S
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 75 75 ±20 ±30 480 200 1500 200 3 940 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A A J W °C °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
...
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