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IXFN520N075T2

Part Number	IXFN520N075T2
Manufacturer	IXYS
Description	TrenchT2 GigaMOS HiperFET Power MOSFET
Published	Jul 5, 2010
Detailed Description	Preliminary Technical Information www.DataSheet4U.com TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET N-Channel Enhanceme...
Datasheet	IXFN520N075T2 PDF File

Overview

Preliminary Technical Information www.
DataSheet4U.
com TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN520N075T2 VDSS ID25 = = RDS(on) ≤ 75V 480A 1.
9mΩ miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 75 75 ±20 ±30 480 200 1500 200 3 940 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A A J W °C °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
...

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IXFN520N075T2 TrenchT2 GigaMOS HiperFET Power MOSFET - IXYS

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