Part Number
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M24L416256DA |
Manufacturer
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Elite Semiconductor Memory Technology |
Description
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4-Mbit (256K x 16) Pseudo Static RAM |
Published
|
Jul 8, 2010 |
Detailed Description
|
ESMT
PSRAM
Features
• Advanced low-power architecture •High speed: 55 ns, 60 ns and 70 ns •Wide voltage range: 2.7V to 3...
|
Datasheet
|
M24L416256DA
|
Overview
ESMT
PSRAM
Features
• Advanced low-power architecture •High speed: 55 ns, 60 ns and 70 ns •Wide voltage range: 2.
7V to 3.
6V •Typical active current: 1 mA @ f = 1 MHz •Low standby power •Automatic power-down when deselected
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M24L416256DA 4-Mbit (256K x 16) Pseudo Static RAM
reducing power consumption dramatically when deselected ( CE1 HIGH, CE2 LOW or both BHE and BLE are HIGH).
The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected ( CE1 HIGH, CE2 LOW, OE is HIGH), or during a write operation (Chip Enabled and Write Enable WE LOW).
Reading from the device is accomplished by asserting the Chip Enables ( CE1 LOW and CE2 HIGH) and ...
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