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M24L416256SA

Elite Semiconductor Memory Technology
Part Number M24L416256SA
Manufacturer Elite Semiconductor Memory Technology
Description 4-Mbit (256K x 16) Pseudo Static RAM
Published Jul 8, 2010
Detailed Description ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typ...
Datasheet PDF File M24L416256SA PDF File

M24L416256SA
M24L416256SA

Overview
ESMT PSRAM Features • Wide voltage range: 2.
7V–3.
6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax (70-ns speed) • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power www.
DataSheet4U.
com M24L416256SA 4-Mbit (256K x 16) Pseudo Static RAM The input/output pins (I/O0through I/O15) are placed in a high-impedance state when : deselected ( CE HIGH), outputs are disabled ( OE HIGH), both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip...


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