Part Number
|
M24L416256SA |
Manufacturer
|
Elite Semiconductor Memory Technology |
Description
|
4-Mbit (256K x 16) Pseudo Static RAM |
Published
|
Jul 8, 2010 |
Detailed Description
|
ESMT
PSRAM
Features
• Wide voltage range: 2.7V–3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typ...
|
Datasheet
|
M24L416256SA
|
Overview
ESMT
PSRAM
Features
• Wide voltage range: 2.
7V–3.
6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax (70-ns speed) • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power
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M24L416256SA 4-Mbit (256K x 16) Pseudo Static RAM
The input/output pins (I/O0through I/O15) are placed in a high-impedance state when : deselected ( CE HIGH), outputs are disabled ( OE HIGH), both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip...
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