TPC8A07-H com
TOSHIBA Field Effect
Transistor with Built-in
Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H)
TPC8A07-H
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications
• • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.
4 nC (typ.
) (Q2) QSW = 3.
6 nC (typ.
) Low drain-source ON-resistance: (Q1) RDS (ON) = 21 mΩ (typ.
) (Q2) RDS (ON) = 14 mΩ (typ.
) Low leakage current: (Q1) IDSS = 10 μA (max) (VDS = 30 V) (Q2) IDSS =100μA (max) (VDS = 30 V) Enhancement mode: (Q1) Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 1.
0 mA) (Q2) Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 1.
0 ...