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TPC8A07-H

Toshiba Semiconductor
Part Number TPC8A07-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC8A07-H www.DataSheet4U.com TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS...
Datasheet PDF File TPC8A07-H PDF File

TPC8A07-H
TPC8A07-H

Overview
TPC8A07-H www.
DataSheet4U.
com TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.
4 nC (typ.
) (Q2) QSW = 3.
6 nC (typ.
) Low drain-source ON-resistance: (Q1) RDS (ON) = 21 mΩ (typ.
) (Q2) RDS (ON) = 14 mΩ (typ.
) Low leakage current: (Q1) IDSS = 10 μA (max) (VDS = 30 V) (Q2) IDSS =100μA (max) (VDS = 30 V) Enhancement mode: (Q1) Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 1.
0 mA) (Q2) Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 1.
0 ...


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