SSM3K7002BFU
TOSHIBA Field-Effect
Transistor Silicon N Channel MOS Type (U-MOSⅣ)
SSM3K7002BFU
High-Speed Switching Applications Analog Switch Applications
Unit: mm
• Small package • Low ON-resistance : RDS(ON) = 3.
3 Ω (max) (@VGS = 4.
5 V)
: RDS(ON) = 2.
6 Ω (max) (@VGS = 5 V) : RDS(ON) = 2.
1 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
± 20
V
Drain current
DC Pulse
ID
200
mA
IDP
800
Drain power dissipation (Ta = 25°C) PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads ...