SSM6N36FE
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM6N36FE
○ High-Speed Switching Applications
• 1.
5-V drive • Low ON-resistance: Ron = 1.
52 Ω (max) (@VGS = 1.
5 V)
: Ron = 1.
14 Ω (max) (@VGS = 1.
8 V) : Ron = 0.
85 Ω (max) (@VGS = 2.
5 V) : Ron = 0.
66 Ω (max) (@VGS = 4.
5 V) : Ron = 0.
63 Ω (max) (@VGS = 5.
0 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
1.
6±0.
05 1.
0±0.
05 0.
5 0.
5
1.
6±0.
05 1.
2±0.
05
Unit: mm
1
6
2
5
3
4
0.
2±0.
05
Characteristics
Symbol
Rating
Unit
0.
12±0.
05
0.
55±0.
05
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
500 mA
1000
Drain power dissipation
PD (Note 1)
150
mW
ES6...