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SSM6N36FE

Toshiba Semiconductor
Part Number SSM6N36FE
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 21, 2010
Detailed Description SSM6N36FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36FE ○ High-Speed Switching Applications •...
Datasheet PDF File SSM6N36FE PDF File

SSM6N36FE
SSM6N36FE

Overview
SSM6N36FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36FE ○ High-Speed Switching Applications • 1.
5-V drive • Low ON-resistance: Ron = 1.
52 Ω (max) (@VGS = 1.
5 V) : Ron = 1.
14 Ω (max) (@VGS = 1.
8 V) : Ron = 0.
85 Ω (max) (@VGS = 2.
5 V) : Ron = 0.
66 Ω (max) (@VGS = 4.
5 V) : Ron = 0.
63 Ω (max) (@VGS = 5.
0 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1.
6±0.
05 1.
0±0.
05 0.
5 0.
5 1.
6±0.
05 1.
2±0.
05 Unit: mm 1 6 2 5 3 4 0.
2±0.
05 Characteristics Symbol Rating Unit 0.
12±0.
05 0.
55±0.
05 Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 500 mA 1000 Drain power dissipation PD (Note 1) 150 mW ES6 1.
Source1 2.
Gate1 3.
Drain2 4.
Source2 5.
Gate2 6.
Drain1 Channel temperature Storage temperature Tch 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the TOSHIBA 2-2N1A reliability significantly even if the operating conditions (i.
e.
operating Weight: 3.
0 mg (typ.
) temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating Mounted on an FR4 board (25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 0.
135 mm2 × 6) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 NX 1 2 3 Q1 Q2 1 2 3 Start of commercial production 2008-02 1 2014-03-01 SSM6N36FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Out...


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