TK12J60U
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (DTMOS II)
TK12J60U
Switching
Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.
36 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 7.
0 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature ra...