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TK12J60U

Toshiba Semiconductor
Part Number TK12J60U
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 21, 2010
Detailed Description TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK12J60U Switching Regulator Application...
Datasheet PDF File TK12J60U PDF File

TK12J60U
TK12J60U

Overview
TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK12J60U Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.
36 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 7.
0 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature ra...


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