isc Silicon
PNP Darlington Power
Transistor
2SB1340
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-10
A
2 W
30
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc websit...