Freescale Semiconductor Technical Data
Document Number: MRF8S7120N www.
DataSheet4U.
com Rev.
0, 5/2010
RF Power Field Effect
Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 728 to 768 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.
2 19.
2 19.
2 ηD (%) 36.
6 37.
1 38.
1 Output PAR (dB) 6.
3 6.
4 6.
3 ACPR (dBc) --38.
3 --38.
2 --...