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MRF8S7120NR3

Motorola
Part Number MRF8S7120NR3
Manufacturer Motorola
Description RF Power Field Effect Transistor
Published Aug 14, 2010
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF8S7120N www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field E...
Datasheet PDF File MRF8S7120NR3 PDF File

MRF8S7120NR3
MRF8S7120NR3

Overview
Freescale Semiconductor Technical Data Document Number: MRF8S7120N www.
DataSheet4U.
com Rev.
0, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 728 to 768 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.
2 19.
2 19.
2 ηD (%) 36.
6 37.
1 38.
1 Output PAR (dB) 6.
3 6.
4 6.
3 ACPR (dBc) --38.
3 --38.
2 --37.
6 MRF8S7120NR3 728-768 MHz, 32 W AVG.
, 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET • Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 178 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 125 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1.
Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) CASE 2021-03, STYLE 1 OM-780-2 PLASTIC Symbol VDSS VGS VDD Tstg TC TJ Value --0.
5, +70 --6.
0, +10 32, +0 --65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 31.
5 W CW, 28 Vdc, ...


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