RF Power Field Effect Transistor
Freescale Semiconductor Technical Data Document Number: MRF8S7120N www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • ...
Motorola