Freescale Semiconductor Technical Data
Document Number: MRF7S35120HS www.
DataSheet4U.
com Rev.
1, 6/2008
RF Power Field Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
• Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.
), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 12 dB Drain Efficiency — 40% • Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA, Pout = 18 Watts Avg.
, f = 3500 MHz, 802.
16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.
5 dB @ 0.
01% Probability on CCDF Powe...