DatasheetsPDF.com

MRF7S35120HSR3

Part Number	MRF7S35120HSR3
Manufacturer	Motorola
Description	RF Power Field Effect Transistor
Published	Aug 14, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF7S35120HS www.DataSheet4U.com Rev. 1, 6/2008 RF Power Field...
Datasheet	MRF7S35120HSR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF7S35120HS www.
DataSheet4U.
com Rev.
1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
• Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.
), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 12 dB Drain Efficiency — 40% • Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA, Pout = 18 Watts Avg.
, f = 3500 MHz, 802.
16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.
5 dB @ 0.
01% Probability on CCDF Power Gain — 13 dB Drain Efficiency — 16% RCE — - 33 dB (EVM — 2.
2% rms) • Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak Power • Capable of Handling 3 dB Overdrive @ 32 Vdc Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ea...

Similar Datasheet

MRF7S35120HSR3 RF Power Field Effect Transistor - Motorola
MRF7S35120HSR3 RF Power Field Effect Transistor - Motorola

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)