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EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose
Transistor
PNP Dual
http://onsemi.
com
This
transistor is designed for general purpose amplifier applications.
It is housed in the SOT−563 which is designed for low power surface mount applications.
Features
(3)
(2)
(1)
• Lead−Free Solder Plating • Low VCE(SAT), t0.
5 V • These are Pb−Free Devices
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.
0 −100 Unit V V V mAdc
Q1
Q2
(4)
(5)
(6)
6 1
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°...