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EMT1DXV6T5

Part Number	EMT1DXV6T5
Manufacturer	ON Semiconductor
Description	Dual General Purpose Transistor
Published	Aug 15, 2010
Detailed Description	www.DataSheet4U.com EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor ...
Datasheet	EMT1DXV6T5 PDF File

Overview

www.
DataSheet4U.
com EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.
com This transistor is designed for general purpose amplifier applications.
It is housed in the SOT−563 which is designed for low power surface mount applications.
Features (3) (2) (1) • Lead−Free Solder Plating • Low VCE(SAT), t0.
5 V • These are Pb−Free Devices MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.
0 −100 Unit V V V mAdc Q1 Q2 (4) (5) (6) 6 1 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range RqJA TJ, Tstg RqJA Symbol PD 357 (Note 1) 2.
9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.
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