isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC4368
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: VCEO= 150V(Min) ·Complement to Type 2SA1657 ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5.
0
V
IC
Collector Current-Continuous
1.
5
A
IB
Base Current-Continuous
Collector Power Dissipation @TC= 25℃
PC
Collector Power Dissipation @Ta= 25℃
TJ
Junction Temperature
Tstg
S...