INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD - 97317 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 150 °C Square RBSOA 100% of the parts tested for clamped inductive load Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Fre...
International Rectifier