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IRGP4072DPBF

International Rectifier
Part Number IRGP4072DPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 20, 2010
Detailed Description www.DataSheet4U.com PD - 97317 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • •...
Datasheet PDF File IRGP4072DPBF PDF File

IRGP4072DPBF
IRGP4072DPBF

Overview
www.
DataSheet4U.
com PD - 97317 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 150 °C Square RBSOA 100% of the parts tested for clamped inductive load Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C IRGP4072DPbF VCES = 300V IC = 40A, TC = 100°C G VCE(on) typ.
= 1.
46V E Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Low EMI n-channel C Applications • • • • Uninterruptible Power Supplies Battery operated vehicles Welding Solar converters and inverters E C G TO-247AC G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in (1.
1 N·m) Max.
300 70 40 120 120 70 40 120 ±20 ±30 180 71 -55 to +150 Units V c e A Continuous Gate-to-Emitter Voltage V W °C Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min.
––– ––– ––– ––– Typ.
––– ––– 0.
24 80 Max.
0.
70 0.
87 ––– ––– Units °C/W 1 www.
irf...


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