www.
DataSheet4U.
com
FQA6N90C 900V N-Channel MOSFET
QFET
FQA6N90C
900V N-Channel MOSFET
Features
• • • • • • 6A, 900V, RDS(on) = 2.
3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Improved dv/dt capability
September 2006 ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode ...