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6N90-FC

UTC
Part Number 6N90-FC
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Jan 2, 2022
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 6N90-FC Preliminary 6A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90-FC pro...
Datasheet PDF File 6N90-FC PDF File

6N90-FC
6N90-FC

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 6N90-FC Preliminary 6A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
 FEATURES * RDS(ON) ≤ 2.
8 Ω @ VGS=10V, ID=3.
0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 6N90L-TA3-T 6N90G-TA3-T 6N90L-TF1-T 6N90G-TF1-T 6N90L-TF2-T 6N90G-TF2-T 6N90L-TF3-T 6N90G-TF3-T 6N90L-TM3-T 6N90G-TM3-T 6N90L-TN3-R 6N90G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2021 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R205-611.
c 6N90-FC Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 900 V VGSS ±30 V Continuous Drain Current Pulsed Drain Current (Note 2) ID 6 A IDM 12 A Avalanche Energy (Note 3) Single Pulsed EAS 277 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.
6 V/ns TO-220 120 W Power Dissipation (TA=25°С) TO-220F/TO-220F1 TO-220F2 PD 37 W TO-251/TO-252 49 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
L=30mH, IAS=4.
3A, VDD=100V, RG=25 Ω, Starting TJ = 25°C 4.
ISD ≤ 6.
0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAME...


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