Part Number
|
RJP6085DPK |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N-Channel IGBT |
Published
|
Oct 12, 2010 |
Detailed Description
|
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RJP6085DPK
Silicon N Channel IGBT High Speed Power Switching
Features
• High speed switching • Low ...
|
Datasheet
|
RJP6085DPK
|
Overview
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RJP6085DPK
Silicon N Channel IGBT High Speed Power Switching
Features
• High speed switching • Low collector to emitter saturation voltage REJ03G1862-0100 Rev.
1.
00 Nov 09, 2009
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
4 C
G
1.
Gate 2.
Collecotor 3.
Emitter 4.
Collector (Flange)
1
2
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
Pulse width limited by safe operating area.
2.
Value at Tc = 25°C Symbol VCES VGES IC IC(peak) Note1 PC Note2 θj-c N...
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