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RJP6085DPK

Renesas Technology
Part Number RJP6085DPK
Manufacturer Renesas Technology
Description Silicon N-Channel IGBT
Published Oct 12, 2010
Detailed Description www.DataSheet4U.com RJP6085DPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low ...
Datasheet PDF File RJP6085DPK PDF File

RJP6085DPK
RJP6085DPK

Overview
www.
DataSheet4U.
com RJP6085DPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low collector to emitter saturation voltage REJ03G1862-0100 Rev.
1.
00 Nov 09, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 C G 1.
Gate 2.
Collecotor 3.
Emitter 4.
Collector (Flange) 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
Pulse width limited by safe operating area.
2.
Value at Tc = 25°C Symbol VCES VGES IC IC(peak) Note1 PC Note2 θj-c Note2 Tj Tstg Ratings 600 ±30 40 80 178.
5 0.
7 150 –55 to +150 Unit V V A A W °C/W °C °C REJ03G1862-0100 Rev.
1.
00 Nov 09, 2009 Page 1 of 5 RJP6085DPK www.
DataSheet4U.
com Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cuto...


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