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Part Number
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RJP6085DPN |
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Manufacturer
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Renesas Technology |
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Description
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Silicon N-Channel IGBT |
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Published
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Oct 12, 2010 |
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Detailed Description
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RJP6085DPN
Silicon N Channel IGBT High Speed Power Switching
Features
• High speed switching • Low ...
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Datasheet
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RJP6085DPN
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Overview
com
RJP6085DPN
Silicon N Channel IGBT High Speed Power Switching
Features
• High speed switching • Low collector to emitter saturation voltage REJ03G1863-0100 Rev.
1.
00 Nov 09, 2009
Outline
RENESAS Package code: PRSS0004AC-A) (Package name: TO-220AB)
4 C
G
1.
Gate 2.
Collector 3.
Emitter 4.
Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
Pulse width limited by safe operating area.
2.
Value at Tc = 25°C Symbol VCES VGES IC IC(peak) Note1 PC Note2 θj-c...
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