Part Number
|
IXFR180N10 |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Nov 7, 2010 |
Detailed Description
|
HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165
(Electrically Isolated Back Surface) Single MOSF...
|
Datasheet
|
IXFR180N10
|
Overview
HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165
(Electrically Isolated Back Surface) Single MOSFET Die
Preliminary data
RDS(on) =
V A 8 mW
trr £ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 100 100 ±20 ±30 165 76 720 180 60 3 5 400 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A mJ J V/ns
ISOPLUS 247TM
G
D
Isolated back sur...
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