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IXFR180N085

IXYS Corporation
Part Number IXFR180N085
Manufacturer IXYS Corporation
Description Power MOSFET
Published Nov 7, 2010
Detailed Description HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die Preliminary da...
Datasheet PDF File IXFR180N085 PDF File

IXFR180N085
IXFR180N085

Overview
HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.
6 mm (0.
063 in.
) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead current limit TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 85 85 ±20 ±30 180 76 720 180 60 3 5 400 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 5 V V V V A A A A mJ J V/ns W °C °C °C °C V~ g VDSS =...


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