Part Number
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TC55VZM216AFTN12 |
Manufacturer
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Toshiba Semiconductor |
Description
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16-BIT CMOS STATIC RAM |
Published
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Nov 8, 2010 |
Detailed Description
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TC55VZM216AJJN/AFTN08,10,12
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT CMOS STATIC...
|
Datasheet
|
TC55VZM216AFTN12
|
Overview
TC55VZM216AJJN/AFTN08,10,12
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION
The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.
3 V power supply.
Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.
Data byte control signals ( LB , UB ) provide lower and upper byte access.
This device is well suited to cache memory applications where high-speed access and high-speed stora...
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