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TC55VZM216AFTN10

Toshiba Semiconductor
Part Number TC55VZM216AFTN10
Manufacturer Toshiba Semiconductor
Description 16-BIT CMOS STATIC RAM
Published Nov 8, 2010
Detailed Description TC55VZM216AJJN/AFTN08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC...
Datasheet PDF File TC55VZM216AFTN10 PDF File

TC55VZM216AFTN10
TC55VZM216AFTN10

Overview
TC55VZM216AJJN/AFTN08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.
3 V power supply.
Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.
Data byte control signals ( LB , UB ) provide lower and upper byte access.
This device is well suited to cache memory applications where high-speed access and high-speed storage are required.
All inputs and outputs are directly LVTTL compatible.
The TC55VZM216AJJN/AFTN is available in plastic 44-pin SOJ and TSOP with 400mil width for high density surface assembly.
FEATURES • Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AF...


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