|
Part Number
|
4AM17 |
|
Manufacturer
|
Hitachi Semiconductor |
|
Description
|
Silicon N/P-Channel/P-Channel Power MOS FET Array |
|
Published
|
Nov 12, 2010 |
|
Datasheet
|
4AM17
|
Features
• Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A
• 4 V gate drive devices.
• High density mounting
Outline
SP-12
12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D
34
56
78
910 1112
...
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