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Part Number
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4AM13 |
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Manufacturer
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Hitachi Semiconductor |
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Description
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Silicon N-Channel/P-Channel Power MOS FET Array |
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Published
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Nov 12, 2010 |
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Detailed Description
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4AM13
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resista...
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Datasheet
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4AM13
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Overview
4AM13
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N-channel: RDS(on) ≤ 0.
4 Ω, VGS = 10 V, ID = 1.
5 A P-channel: RDS(on) ≤ 0.
45 Ω, VGS = –10 V, ID = –1.
5 A • • • • • Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver
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DataSheet.
in
4AM13
Outline
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Rating Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 D...
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