Part Number
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4AM16 |
Manufacturer
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Hitachi Semiconductor |
Description
|
Silicon N-Channel/P-Channel Power MOS FET Array |
Published
|
Nov 12, 2010 |
Detailed Description
|
4AM16
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resista...
|
Datasheet
|
4AM16
|
Overview
4AM16
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N Channel: RDS(on) ≤ 0.
17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.
2 Ω, VGS = –10 V, I D = –4 A • High speed switching • High density mounting • Suitable for H-brided motor driver
Outline
www.
DataSheet.
in
4AM16
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 Device Operation Tch ...
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