Part Number
|
WFY4101 |
Manufacturer
|
WINSEMI SEMICONDUCTOR |
Description
|
Trench Power MOSFET |
Published
|
Nov 25, 2010 |
Detailed Description
|
www.DataSheet.in
WFY4101 Trench Power MOSFET
−23 −20 V, Single P−Channel, SOT SOT−
Features
■ -3.2A, -20V, RDS(on)(Max...
|
Datasheet
|
WFY4101
|
Overview
www.
DataSheet.
in
WFY4101 Trench Power MOSFET
−23 −20 V, Single P−Channel, SOT SOT−
Features
■ -3.
2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.
5V ■ −1.
8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced MOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection
G S
D
SOT-23
Absolute Maximum Ratings
Symbol
VDSS ID Drain Source Voltage Contin...
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