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WFY4101

Part Number	WFY4101
Manufacturer	WINSEMI SEMICONDUCTOR
Description	Trench Power MOSFET
Published	Nov 25, 2010
Detailed Description	www.DataSheet.in WFY4101 Trench Power MOSFET −23 −20 V, Single P−Channel, SOT SOT− Features ■ -3.2A, -20V, RDS(on)(Max...
Datasheet	WFY4101 PDF File

Overview

www.
DataSheet.
in WFY4101 Trench Power MOSFET −23 −20 V, Single P−Channel, SOT SOT− Features ■ -3.
2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.
5V ■ −1.
8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi’s advanced MOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S D SOT-23 Absolute Maximum Ratings Symbol VDSS ID Drain Source Voltage Contin...

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WFY4101 Trench Power MOSFET - WINSEMI SEMICONDUCTOR

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