Part Number
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WFF5N60 |
Manufacturer
|
WINSEMI SEMICONDUCTOR |
Description
|
Silicon N-Channel MOSFET |
Published
|
Nov 25, 2010 |
Detailed Description
|
www.DataSheet.in
WFF5N60
Silicon N-Channel MOSFET
Features
■ 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V ■ Ultra-low Gate Charg...
|
Datasheet
|
WFF5N60
|
Overview
www.
DataSheet.
in
WFF5N60
Silicon N-Channel MOSFET
Features
■ 4.
5A,600V,RDS(on)(Max 2.
2Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ, Tstg ...
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