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WFF5N60B

Winsemi
Part Number WFF5N60B
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 21, 2017
Detailed Description WFF5N60B Product Description Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate ch...
Datasheet PDF File WFF5N60B PDF File

WFF5N60B
WFF5N60B

Overview
WFF5N60B Product Description Silicon N-Channel MOSFET Features � 4.
5A,600V,RDS(on)(Max2.
4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche \ characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Po...


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