Part Number
|
WFF10N65 |
Manufacturer
|
WINSEMI SEMICONDUCTOR |
Description
|
Silicon N-Channel MOSFET |
Published
|
Nov 25, 2010 |
Detailed Description
|
www.DataSheet.in
F10N6 5 WF WFF 10N65
Silicon N-Channel MOSFET
Features
� � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ul...
|
Datasheet
|
WFF10N65
|
Overview
www.
DataSheet.
in
F10N6 5 WF WFF 10N65
Silicon N-Channel MOSFET
Features
� � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for AC-DC switching power supplies,DC-DC power converters,high voltage h-bridge motor drive PWM.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD ...
Similar Datasheet