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WFF10N60

WINSEMI SEMICONDUCTOR
Part Number WFF10N60
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low G...
Datasheet PDF File WFF10N60 PDF File

WFF10N60
WFF10N60

Overview
www.
DataSheet.
in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.
75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.
Absolute Maximum Ratings Symbol VDSS ID ID...


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