Part Number
|
KM736V749 |
Manufacturer
|
Samsung Semiconductor |
Description
|
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM |
Published
|
Jan 12, 2011 |
Detailed Description
|
KM736V749 KM718V849
Document Title
128Kx36 & 256Kx18 Pipelined NtRAMTM
128Kx36 & 256Kx18-Bit Pipelined NtRAM TM
Revis...
|
Datasheet
|
KM736V749
|
Overview
KM736V749 KM718V849
Document Title
128Kx36 & 256Kx18 Pipelined NtRAMTM
128Kx36 & 256Kx18-Bit Pipelined NtRAM TM
Revision History
Rev.
No.
0.
0 0.
1 History 1.
Initial document.
1.
Changed tCD,tOE from 4.
0ns to 4.
2ns at -75 2.
Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA.
Add VDDQ Supply voltage( 2.
5V I/O ) Changed VOL Max value from 0.
2V to 0.
4V at 2.
5V I/O.
Final spec Release.
Remove VDDQ Supply voltage( 2.
5V I/O ) Add VDDQ Supply voltage( 2.
5V I/O ) Draft Date July.
06.
1998 Oct.
10 .
1998 Remark Preliminary Preliminary
0.
2 0.
3 1.
0 2.
0 3.
0
Dec.
10.
1998 Dec.
23.
1998 Jan.
29.
1999 Feb.
25.
1999 May.
13.
1999
Preliminary Preliminary Final ...
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