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KM736V790

Samsung Semiconductor
Part Number KM736V790
Manufacturer Samsung Semiconductor
Description 128Kx36 Synchronous SRAM
Published Jan 12, 2011
Detailed Description KM736V790 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. N...
Datasheet PDF File KM736V790 PDF File

KM736V790
KM736V790

Overview
KM736V790 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.
No.
0.
0 0.
1 History Initial draft Change speed symbol 6.
0/6.
7/7.
5/8.
5 to 60/67/75/85, Change 7.
5 bin to 7.
2 Change speed bin from 60/67/75/85 to 72/85/10.
Change DC characteristics V DD condition from 3.
3V±5% to 3.
3V+10%/-5% Change Input/output leackage currant for ±1µ A to ±2µA, Insert Note 4 at AC timing characteristics.
Modify read timing & Power down cycle timing.
Change ISB2 value from 10mA to 20mA.
Remove Low power version.
Change Undershoot spec from -3.
0V(pulse width≤20ns) to -2.
0V(pulse width≤tCYC/2) Add Overshoot spec 4.
6V((pulse width≤tCYC/2) Change VIN max from 5...


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