isc Silicon
NPN Power
Transistor
DESCRIPTIONV ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC = 10A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC
converter and
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
IE
Emitter Current-Continuous
10
A
IB
Base Current-Continuous
3
A
PC
Collector Power Dissipation @TC=25℃ 100
W
TJ
Junction Temperature
150
℃
Tstg...