NTGD4169F Power MOSFET and
Schottky Diode
Features
30 V, 2.
9 A, N−Channel with
Schottky Barrier Diode, TSOP−6
• • • • • •
Fast Switching Low Gate Change Low RDS(on) Low VF
Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device
www.
DataSheet4U.
com
http://onsemi.
com N−CHANNEL MOSFET
V(BR)DSS 30 V RDS(on) Max 90 mW @ 4.
5 V 125 mW @ 2.
5 V ID Max 2.
6 A 2.
2 A
SCHOTTKY DIODE
VR Max 30 V VF Max 0.
53 V IF Max 1.
0 A
Applications
• DC−DC Converters • Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current...