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NTGD4167C

ON Semiconductor
Part Number NTGD4167C
Manufacturer ON Semiconductor
Description Power MOSFET
Published Feb 16, 2011
Detailed Description NTGD4167C MOSFET – POWER, Dual, Complementary, TSOP-6 30 V, +2.9/-2.2 A Features • Complementary N−Channel and P−Chann...
Datasheet PDF File NTGD4167C PDF File

NTGD4167C
NTGD4167C

Overview
NTGD4167C MOSFET – POWER, Dual, Complementary, TSOP-6 30 V, +2.
9/-2.
2 A Features • Complementary N−Channel and P−Channel MOSFET • Small Size (3 x 3 mm) Dual TSOP−6 Package • Leading Edge Trench Technology for Low On Resistance • Reduced Gate Charge to Improve Switching Response • Independently Connected Devices to Provide Design Flexibility • This is a Pb−Free Device Applications • DC−DC Conversion Circuits • Load/Power Switching with Level Shift MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage (N−Ch & P−Ch) N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation...


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