NTD5803N Power MOSFET Features 40 V, 76 A, Single N−Channel, DPAK • • • • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp 10 mS) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS VGS ID Value 40 "20 "30 76 54 83 228 − 55 to 175 76 240 W A °C A mJ 1 2 3 1 2 Unit V V V A S N−CHANNEL MOSFET 4 4 www.
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