DatasheetsPDF.com

NTD5806N

Part Number	NTD5806N
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Feb 16, 2011
Detailed Description	NTD5806N, NVD5806N Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) • High Current Capabilit...
Datasheet	NTD5806N PDF File

Overview

NTD5806N, NVD5806N Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) • High Current Capability • Avalanche Energy Specified • NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • CCFL Backlight • DC Motor Control • Power Supply Secondary Side Synchronous Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) VGS ±30 V Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD 33 A 23 40 W Pulsed Drain Current tp = 10 ms IDM 67 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C 175 Source Current (Body Diode) IS 33 A Si...

Similar Datasheet

NTD5802N Power MOSFET - ON Semiconductor
NTD5803N Power MOSFET - ON Semiconductor
NTD5804N Power MOSFET - ON Semiconductor
NTD5805N Power MOSFET - ON Semiconductor
NTD5806N Power MOSFET - ON Semiconductor
NTD5807N Power MOSFET - ON Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)